STB70NF03L-1-ST-Price, Stock & Datasheet

STB70NF03L-1 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The maximum input capacitance of this device is 1440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 70A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 280A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 22 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.

STB70NF03L-1 Features

the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 70A
the turn-off delay time is 21 ns
based on its rated peak drain current 280A.
a 30V drain to source voltage (Vdss)