STB4NK60Z-1-ST-Price, Stock & Datasheet

STB4NK60Z-1 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 120 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 510pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 4A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 29 ns.Peak drain current is 16A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STB4NK60Z-1 Features

the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 29 ns
based on its rated peak drain current 16A.