ST STB30NM60ND

Manufacturer No:

STB30NM60ND

Manufacturer:

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 130m ? @ 12.5A, 10V ±25V 2800pF @ 50V 100nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :3782

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Shipped from：HK Warehouse

Expected Shipping：Tue, May 12 - Wed, May 13, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STB30NM60ND Information

ST STB30NM60ND technical specifications, attributes, parameters and parts with similar specifications to ST STB30NM60ND.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Series
FDmesh? II

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Number of Terminations
2

ECCN Code
EAR99

Resistance
130MOhm

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Base Part Number
STB30N

Pin Count
4

JESD-30 Code
R-PSSO-G2

Qualification Status
Not Qualified

Download datasheets and manufacturer documentation for ST STB30NM60ND.

Datasheets:

stmicroelectronics-stb30nm60nd-datasheets-9153.pdf

STB30NM60ND Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 900 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2800pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12.5A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [25A] according to its drain current.It is [110 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STB30NM60ND Features

the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns