ST STB30N65DM6AG

Manufacturer No:

STB30N65DM6AG

Manufacturer:

ST

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel 115mOhm @ 10A, 10V ±25V 2000 pF @ 100 V 46 nC @ 10 V 650 V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :1693

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STB30N65DM6AG Information

ST STB30N65DM6AG technical specifications, attributes, parameters and parts with similar specifications to ST STB30N65DM6AG.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Supplier Device Package
D2PAK (TO-263)

Mfr
STMicroelectronics

Package
Digi-Reel?

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
223W (Tc)

Series
Automotive, AEC-Q101, MDmesh? DM2

Operating Temperature
-55°C ~ 150°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
115mOhm @ 10A, 10V

Vgs(th) (Max) @ Id
4.75V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 100 V

Current - Continuous Drain (Id) @ 25°C
28A (Tc)

Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±25V

Download datasheets and manufacturer documentation for ST STB30N65DM6AG.

STB30N65DM6AG Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2000 pF @ 100 V.This transistor requires a drain-source voltage (Vdss) of 650 V.