ST STB24N65M2
Manufacturer No:
STB24N65M2
Manufacturer:
ST
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 230m ? @ 8A, 10V ±25V 1060pF @ 100V 29nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :2201
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STB24N65M2 Information
ST STB24N65M2 technical specifications, attributes, parameters and parts with similar specifications to ST STB24N65M2.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time
- 26 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- MDmesh? M2
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- STB24N
Download datasheets and manufacturer documentation for ST STB24N65M2.
STB24N65M2 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 650 mJ.A device's maximal input capacitance is 1060pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 16A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 64A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 650V.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
STB24N65M2 Features
the avalanche energy rating (Eas) is 650 mJ
a continuous drain current (ID) of 16A
based on its rated peak drain current 64A.
a 650V drain to source voltage (Vdss)
STB24N65M2 Applications
There are a lot of STMicroelectronics
STB24N65M2 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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