ST STB150N3LH6
Manufacturer No:
STB150N3LH6
Manufacturer:
ST
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3m ? @ 40A, 10V ±20V 3800pF @ 25V 80nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :5205
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STB150N3LH6 Information
ST STB150N3LH6 technical specifications, attributes, parameters and parts with similar specifications to ST STB150N3LH6.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- DeepGATE?, STripFET? VI
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Reach Compliance Code
- unknown
- Type
- Parameter
- Base Part Number
- STB150N
- Power Dissipation-Max
- 110W Tc
- Element Configuration
- Single
- Power Dissipation
- 110W
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 3m ? @ 40A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 3800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 80A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 80nC @ 10V
Download datasheets and manufacturer documentation for ST STB150N3LH6.
STB150N3LH6 Overview
The maximum input capacitance of this device is 3800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (5V 10V), this device helps reduce its power consumption.
STB150N3LH6 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 100 ns
STB150N3LH6 Applications
There are a lot of STMicroelectronics
STB150N3LH6 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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