ST STB14NK50Z-1
Manufacturer No:
STB14NK50Z-1
Manufacturer:
ST
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 380m ? @ 6A, 10V ±30V 2000pF @ 25V 92nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :3755
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Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 7 - Mon, Jun 8, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STB14NK50Z-1 Information
ST STB14NK50Z-1 technical specifications, attributes, parameters and parts with similar specifications to ST STB14NK50Z-1.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- SuperMESH?
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Resistance
- -340mOhm
- Terminal Finish
- Tin (Sn)
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- 245
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- STB14N
Download datasheets and manufacturer documentation for ST STB14NK50Z-1.
STB14NK50Z-1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The maximum input capacitance of this device is 2000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 54 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STB14NK50Z-1 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 48A.
STB14NK50Z-1 Applications
There are a lot of STMicroelectronics
STB14NK50Z-1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
