ST STB10N65K3
Manufacturer No:
STB10N65K3
Manufacturer:
ST
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 1 ? @ 3.6A, 10V ±30V 1180pF @ 25V 42nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :8600
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STB10N65K3 Information
ST STB10N65K3 technical specifications, attributes, parameters and parts with similar specifications to ST STB10N65K3.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- SuperMESH3?
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- STB10N6
- Number of Channels
- 1
- Power Dissipation-Max
- 150W Tc
- Element Configuration
- Single
- Turn On Delay Time
- 14.5 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 1 ? @ 3.6A, 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 100?A
- Input Capacitance (Ciss) (Max) @ Vds
- 1180pF @ 25V
Download datasheets and manufacturer documentation for ST STB10N65K3.
STB10N65K3 Overview
A device's maximal input capacitance is 1180pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 650V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 44 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
STB10N65K3 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 44 ns
STB10N65K3 Applications
There are a lot of STMicroelectronics
STB10N65K3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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