ROHM SST6427T116
Manufacturer No:
SST6427T116
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NPN - Darlington 50nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
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SST6427T116 information
ROHM SST6427T116 technical specifications, attributes, parameters and parts with similar specifications to ROHM SST6427T116.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material
- SILICON
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- HTS Code
- 8541.21.00.75
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- JESD-30 Code
- R-PDSO-G3
- Operating Temperature (Max)
- 150°C
- Number of Elements
- 1
- Polarity
- NPN
- Element Configuration
- Single
- Transistor Application
- AMPLIFIER
- Transistor Type
- NPN - Darlington
- Collector Emitter Voltage (VCEO)
- 40V
- Max Collector Current
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 10000 @ 10mA 5V
- Current - Collector Cutoff (Max)
- 50nA ICBO
- Collector Emitter Breakdown Voltage
- 40V
- Transition Frequency
- 250MHz
- Collector Base Voltage (VCBO)
- 40V
- Emitter Base Voltage (VEBO)
- 12V
- VCEsat-Max
- 1.5 V
- Collector-Base Capacitance-Max
- 7pF
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for ROHM SST6427T116.
SST6427T116 Overview
In this device, the DC current gain is 10000 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500?A, 500mA.With the emitter base voltage set at 12V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 50nA volts at Single BJT transistors maximum.
SST6427T116 Features
the DC current gain for this device is 10000 @ 10mA 5V
the vce saturation(Max) is 1.5V @ 500?A, 500mA
the emitter base voltage is kept at 12V
a transition frequency of 250MHz
SST6427T116 Applications
There are a lot of ROHM Semiconductor
SST6427T116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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