ROHM SST6427T116

Manufacturer No:

SST6427T116

Manufacturer:

ROHM

Package:

TO-236-3, SC-59, SOT-23-3

Description:

NPN - Darlington 50nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

Quantity:

In Stock :1334

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Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SST6427T116 Information

ROHM SST6427T116 technical specifications, attributes, parameters and parts with similar specifications to ROHM SST6427T116.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Transistor Element Material
SILICON

Packaging
Tape & Reel (TR)

Published
2005

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Type
Parameter

HTS Code
8541.21.00.75

Terminal Position
DUAL

Terminal Form
GULL WING

JESD-30 Code
R-PDSO-G3

Operating Temperature (Max)
150°C

Number of Elements
1

Polarity
NPN

Element Configuration
Single

Transistor Application
AMPLIFIER

Transistor Type
NPN - Darlington

Download datasheets and manufacturer documentation for ROHM SST6427T116.

Datasheets:

rohmsemiconductor-sst6427t116-datasheets-4863.pdf

SST6427T116 Overview

In this device, the DC current gain is 10000 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500?A, 500mA.With the emitter base voltage set at 12V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 50nA volts at Single BJT transistors maximum.

SST6427T116 Features

the DC current gain for this device is 10000 @ 10mA 5V
the vce saturation(Max) is 1.5V @ 500?A, 500mA
the emitter base voltage is kept at 12V
a transition frequency of 250MHz