ROHM SST3904HZGT116

Manufacturer No:

SST3904HZGT116

Manufacturer:

ROHM

Package:

TO-236-3, SC-59, SOT-23-3

Description:

Small Signal Bipolar Transistor,

Quantity:

In Stock :8717

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SST3904HZGT116 Information

ROHM SST3904HZGT116 technical specifications, attributes, parameters and parts with similar specifications to ROHM SST3904HZGT116.

Type
Parameter

RoHS Status
RoHS Compliant

Part Life Cycle Code
Active

Ihs Manufacturer
ROHM CO LTD

Reach Compliance Code
compliant

ECCN Code
EAR99

Factory Lead Time
18 Weeks

Date Of Intro
2016-06-29

Samacsys Manufacturer
ROHM Semiconductor

Collector Current-Max (IC)
0.2 A

Collector-Emitter Voltage-Max
40 V

Type
Parameter

Configuration
SINGLE

DC Current Gain-Min (hFE)
30

JESD-30 Code
R-PDSO-G3

JESD-609 Code
e3

Moisture Sensitivity Level
1

Number of Elements
1

Number of Terminals
3

Package Body Material
PLASTIC/EPOXY

Package Shape
RECTANGULAR

Package Style
SMALL OUTLINE

Download datasheets and manufacturer documentation for ROHM SST3904HZGT116.

SST3904HZGT116 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 300MHz in the part.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.