Microchip SST25WF040B-40E/SN
Manufacturer No:
SST25WF040B-40E/SN
Manufacturer:
Microchip
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
1.8V, 4Mbit SPI Flash
Quantity:
In Stock :9180
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Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 7 - Mon, Jun 8, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2. For in-stock parts, orders normally could be shipped out within 1-2days.
SST25WF040B-40E/SN Information
Microchip SST25WF040B-40E/SN technical specifications, attributes, parameters and parts with similar specifications to Microchip SST25WF040B-40E/SN.
- Type
- Parameter
- Density
- 4 Mbit
- Operating Voltage Min (V)
- 1.65
- Operating Voltage Max (V)
- 1.95
- Max. Clock Freq.
- 40 MHz
- Page Size (Bytes)
- 256
- Write Protected
- No
- Write Protect Scheme
- Quarter, Half, Whole Array
- Endurance
- 100,000
- Data Retention
- 20
- Bus Modes
- SPI,SDI
- Type
- Parameter
- Battery Backup
- No
Download datasheets and manufacturer documentation for Microchip SST25WF040B-40E/SN.
Brochures:
Data Sheets:
SST25WF040B is a member of the Serial Flash 25 Series family and feature a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SPI serial flash memory is manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
This Serial Flash significantly improve performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.
This Serial Flash significantly improve performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.
- Single Voltage Read and Write Operations - 1.65-1.95V
- Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3
- High Speed Clock Frequency up to 40MHz
- Dual Input/Output Support - Fast-Read Dual-Output Instruction (3BH) - Fast-Read Dual I/O Instruction (BBH)
- Superior Reliability - Endurance: 100,000 Cycles - Greater than 20 years Data Retention
- Ultra-Low Power Consumption: - Active Read Current: 4 mA (typical) - Standby Current: 10 μA (typical) - Power-down Mode Standby Current: 4 μA (typical)
- Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 64 KByte overlay blocks
- Page Program Mode up to 256 Bytes/Page
- Fast Erase and Page-Program: - Chip-Erase Time: 400 ms (typical) - Sector-Erase Time: 40 ms (typical) - Block-Erase Time: 80 ms (typical) - Page-Program Time: 0.8 ms/ 256 bytes (typical)
- End-of-Write Detection with Software polling the BUSY bit in Status Register
- Hold Pin (HOLD#) to Suspend a serial sequence without deselecting the device
- Write Protection Pin (WP#) - Enables/Disables the Lock-Down function of the status register
- Software Write Protection- Write protection through Block-Protection bits in status register
- Temperature Range: -40°C to +85°C
- Packages Available - 8-lead SOIC (150 mils) - 8-contact USON (2mm x 3mm)
- All devices are RoHS compliant
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