Microchip SST25VF080B-50-4C-QAF
Manufacturer No:
SST25VF080B-50-4C-QAF
Manufacturer:
Microchip
Package:
8-WDFN Exposed Pad
Description:
2.7V to 3.6V 16Mbit SPI Serial Flash
Quantity:
In Stock :1980
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SST25VF080B-50-4C-QAF Information
Microchip SST25VF080B-50-4C-QAF technical specifications, attributes, parameters and parts with similar specifications to Microchip SST25VF080B-50-4C-QAF.
- Type
- Parameter
- Density
- 8 Mbit
- Operating Voltage Min (V)
- 2.7
- Operating Voltage Max (V)
- 3.6
- Max. Clock Freq.
- 50 MHz
- Page Size (Bytes)
- 0
- Write Protected
- No
- Write Protect Scheme
- Quarter, Half, Whole Array
- Endurance
- 100,000
- Data Retention
- 100
- Bus Modes
- SPI
- Type
- Parameter
- Battery Backup
- No
Download datasheets and manufacturer documentation for Microchip SST25VF080B-50-4C-QAF.
Data Sheets:
The SST25VF080B devices are enhanced with improved operating frequency for lower power consumption. SST25VF080B SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
- Single Voltage Read and Write Operations– 2.7-3.6V
- Supports 50 MHz SPI clock (80 MHz no longer available see EOL NOTIFICATION)
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Program & Erase Current: 30mA (max)
- Active Read Current: 10 mA (typical)
- Standby Current: 5 µA (typical)
- Uniform 4 KByte sectors
- Uniform 32 KByte & 64 KByte overlay blocks
- Chip-Erase Time: 35 ms (typical)
- Sector-/Block-Erase Time: 18 ms (typical)
- Byte-Program Time: 7 µs (typical)
- Decrease total chip programming time over Byte-Program operations
- Software polling the BUSY bit in Status Register
- Busy Status readout on SO pin in AAI Mode
- Suspends a serial sequence to the memory without deselecting the device
- Enables/Disables the Lock-Down function of the status register
- Write protection through Block-Protection bits in the status register
- Commercial: 0°C to +70°C
- Industrial: -40°C to +85°C
- Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP
- All devices are RoHS compliant
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