ONSEMI SSR4N60BTF

Manufacturer No:

SSR4N60BTF

Manufacturer:

ONSEMI

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel 2.5Ohm @ 1.4A, 10V ±30V 920 pF @ 25 V 29 nC @ 10 V 600 V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :2592

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Shipped from：HK Warehouse

Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SSR4N60BTF Information

ONSEMI SSR4N60BTF technical specifications, attributes, parameters and parts with similar specifications to ONSEMI SSR4N60BTF.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package
TO-252-3 (DPAK)

Mfr
Fairchild Semiconductor

Product Status
Active

Package
Bulk

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
2.5W (Ta), 49W (Tc)

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
2.5Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)

Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V

Drain to Source Voltage (Vdss)
600 V

Vgs (Max)
±30V

Download datasheets and manufacturer documentation for ONSEMI SSR4N60BTF.

SSR4N60BTF Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 920 pF @ 25 V maximal input capacitance.To operate this transistor, you will need a 600 V drain to source voltage (Vdss).