Rochester SSN1N45BBU
Manufacturer No:
SSN1N45BBU
Manufacturer:
Rochester
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
MOSFET (Metal Oxide) N-Channel Bulk 4.25 ? @ 250mA, 10V ±50V 240pF @ 25V 8.5nC @ 10V 450V TO-226-3, TO-92-3 (TO-226AA)
Quantity:
In Stock :6441
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SSN1N45BBU Information
Rochester SSN1N45BBU technical specifications, attributes, parameters and parts with similar specifications to Rochester SSN1N45BBU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT APPLICABLE
- Pin Count
- 3
- JESD-30 Code
- O-PBCY-T3
- Qualification Status
- COMMERCIAL
Download datasheets and manufacturer documentation for Rochester SSN1N45BBU.
SSN1N45BBU Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 240pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 0.5A.A normal operation of the DS requires keeping the breakdown voltage above 450V.This transistor requires a drain-source voltage (Vdss) of 450V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SSN1N45BBU Features
a 450V drain to source voltage (Vdss)
SSN1N45BBU Applications
There are a lot of Rochester Electronics, LLC
SSN1N45BBU applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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12.28 M
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3,000+
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4.9 M
In-stock SKU
15,000+
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