TOSHIBA SSM6N7002BFE,LM
Manufacturer No:
SSM6N7002BFE,LM
Manufacturer:
TOSHIBA
Package:
SOT-563, SOT-666
Description:
Quantity:
In Stock :4380
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SSM6N7002BFE,LM Information
TOSHIBA SSM6N7002BFE,LM technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA SSM6N7002BFE,LM.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2009
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Power Dissipation
- 150mW
- Type
- Parameter
- Number of Channels
- 2
- FET Type
- 2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs
- 2.1 ? @ 500mA, 10V
- Vgs(th) (Max) @ Id
- 3.1V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 17pF @ 25V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 200mA
- Gate to Source Voltage (Vgs)
- 10V
- Drain to Source Breakdown Voltage
- 60V
- FET Feature
- Logic Level Gate
Download datasheets and manufacturer documentation for TOSHIBA SSM6N7002BFE,LM.
N
Toshiba Transistors - FETs, MOSFETs - Arrays SSM6N7002BFE,LM are a type of field-effect transistor (FET) that uses metal-oxide-semiconductor (MOS) technology. They are used in a variety of applications, including power management, signal processing, and switching. The SSM6N7002BFE,LM is a MOSFET 2N-CH 60V 0.2A ES6N. It has a maximum drain-source voltage of 60V, a maximum drain current of 0.2A, and a maximum gate-source voltage of 20V. It is designed for use in low-voltage, low-power applications. It is suitable for use in a variety of applications, including power management, signal processing, and switching.
Toshiba Transistors - FETs, MOSFETs - Arrays SSM6N7002BFE,LM are a type of field-effect transistor (FET) that uses metal-oxide-semiconductor (MOS) technology. They are used in a variety of applications, including power management, signal processing, and switching. The SSM6N7002BFE,LM is a MOSFET 2N-CH 60V 0.2A ES6N. It has a maximum drain-source voltage of 60V, a maximum drain current of 0.2A, and a maximum gate-source voltage of 20V. It is designed for use in low-voltage, low-power applications. It is suitable for use in a variety of applications, including power management, signal processing, and switching.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
