TOSHIBA SSM6J801R,LF

Manufacturer No:

SSM6J801R,LF

Manufacturer:

TOSHIBA

Package:

6-SMD, Flat Leads

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 32.5m ? @ 3A, 4.5V +6V, -8V 840pF @ 10V 12.8nC @ 4.5V 20V 6-SMD, Flat Leads

Quantity:

In Stock :8537

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Shipped from：HK Warehouse

Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

Step3：Vacuum Packaging

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SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SSM6J801R,LF Information

TOSHIBA SSM6J801R,LF technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA SSM6J801R,LF.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
6-SMD, Flat Leads

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Series
U-MOSVI

Published
2016

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Type
Parameter

Power Dissipation-Max
1.5W Ta

FET Type
P-Channel

Rds On (Max) @ Id, Vgs
32.5m ? @ 3A, 4.5V

Vgs(th) (Max) @ Id
1V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
840pF @ 10V

Current - Continuous Drain (Id) @ 25°C
6A Ta

Gate Charge (Qg) (Max) @ Vgs
12.8nC @ 4.5V

Drain to Source Voltage (Vdss)
20V

Drive Voltage (Max Rds On,Min Rds On)
1.5V 4.5V

Vgs (Max)
+6V, -8V

Download datasheets and manufacturer documentation for TOSHIBA SSM6J801R,LF.

SSM6J801R,LF Overview

A device's maximum input capacitance is 840pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.