TOSHIBA SSM6J771G,LF
Manufacturer No:
SSM6J771G,LF
Manufacturer:
TOSHIBA
Package:
6-UFBGA, WLCSP
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 31m ? @ 3A, 8.5V ±12V 870pF @ 10V 9.8nC @ 4.5V 20V 6-UFBGA, WLCSP
Quantity:
In Stock :7142
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SSM6J771G,LF Information
TOSHIBA SSM6J771G,LF technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA SSM6J771G,LF.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 6-UFBGA, WLCSP
- Number of Pins
- 6
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- U-MOSVI
- Published
- 2013
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 1.2W Ta
- Power Dissipation
- 5W
- FET Type
- P-Channel
- Rds On (Max) @ Id, Vgs
- 31m ? @ 3A, 8.5V
- Vgs(th) (Max) @ Id
- 1.2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 870pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 5A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 9.8nC @ 4.5V
Download datasheets and manufacturer documentation for TOSHIBA SSM6J771G,LF.
SSM6J771G,LF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 870pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 90 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 8.5V), this device contributes to a reduction in overall power consumption.
SSM6J771G,LF Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 90 ns
a 20V drain to source voltage (Vdss)
SSM6J771G,LF Applications
There are a lot of Toshiba Semiconductor and Storage
SSM6J771G,LF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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