TOSHIBA SSM4K27CTTPL3
Manufacturer No:
SSM4K27CTTPL3
Manufacturer:
TOSHIBA
Package:
4-SMD, No Lead
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 205m ? @ 250mA, 4V ±12V 174pF @ 10V 4-SMD, No Lead
Quantity:
In Stock :5475
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 4 - Fri, Jun 5, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SSM4K27CTTPL3 Information
TOSHIBA SSM4K27CTTPL3 technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA SSM4K27CTTPL3.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 4-SMD, No Lead
- Number of Pins
- 4
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- U-MOSIII
- Published
- 2009
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Reach Compliance Code
- unknown
- Number of Channels
- 1
- Power Dissipation-Max
- 400mW Ta
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 400mW
- Turn On Delay Time
- 10 ns
- FET Type
- N-Channel
Download datasheets and manufacturer documentation for TOSHIBA SSM4K27CTTPL3.
SSM4K27CTTPL3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 174pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.There is no drain current on this device since the maximum continuous current it can conduct is 0.5A.As a result of its turn-off delay time, which is 12 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.In addition to reducing power consumption, this device uses drive voltage (1.8V 4V).
SSM4K27CTTPL3 Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 12 ns
SSM4K27CTTPL3 Applications
There are a lot of Toshiba Semiconductor and Storage
SSM4K27CTTPL3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
