TOSHIBA SSM3K7002BF,LF
Manufacturer No:
SSM3K7002BF,LF
Manufacturer:
TOSHIBA
Package:
TO-236-3, SC-59, SOT-23-3
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.1 ? @ 500mA, 10V ±20V 17pF @ 25V TO-236-3, SC-59, SOT-23-3
Quantity:
In Stock :1418
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Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SSM3K7002BF,LF Information
TOSHIBA SSM3K7002BF,LF technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA SSM3K7002BF,LF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- U-MOSIV
- Published
- 2014
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Number of Channels
- 1
- Power Dissipation-Max
- 200mW Ta
- Element Configuration
- Single
- Turn On Delay Time
- 3.3 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 2.1 ? @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 17pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 200mA Ta
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
Download datasheets and manufacturer documentation for TOSHIBA SSM3K7002BF,LF.
SSM3K7002BF,LF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 17pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 200mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 14.5 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 3.3 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 3.1V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
SSM3K7002BF,LF Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 14.5 ns
SSM3K7002BF,LF Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3K7002BF,LF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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