TOSHIBA SSM3K56FS,LF
Manufacturer No:
SSM3K56FS,LF
Manufacturer:
TOSHIBA
Package:
SC-75, SOT-416
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 235m ? @ 800mA, 4.5V ±8V 55pF @ 10V 1nC @ 4.5V SC-75, SOT-416
Quantity:
In Stock :8751
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SSM3K56FS,LF Information
TOSHIBA SSM3K56FS,LF technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA SSM3K56FS,LF.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-75, SOT-416
- Number of Pins
- 3
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- U-MOSVII-H
- Published
- 2014
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Reach Compliance Code
- unknown
- Number of Elements
- 1
- Power Dissipation-Max
- 150mW Ta
- Element Configuration
- Single
- Power Dissipation
- 150mW
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 235m ? @ 800mA, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 1mA
Download datasheets and manufacturer documentation for TOSHIBA SSM3K56FS,LF.
SSM3K56FS,LF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 55pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 800mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.Using drive voltage (1.5V 4.5V), this device contributes to a reduction in overall power consumption.
SSM3K56FS,LF Features
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 20V voltage
SSM3K56FS,LF Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3K56FS,LF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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