TOSHIBA SSM3K303T(TE85L,F)
Manufacturer No:
SSM3K303T(TE85L,F)
Manufacturer:
TOSHIBA
Package:
TO-236-3, SC-59, SOT-23-3
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 83m ? @ 1.5A, 10V ±20V 180pF @ 10V 3.3nC @ 4V TO-236-3, SC-59, SOT-23-3
Quantity:
In Stock :6530
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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2. For in-stock parts, orders normally could be shipped out within 1-2days.
SSM3K303T(TE85L,F) Information
TOSHIBA SSM3K303T(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA SSM3K303T(TE85L,F).
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- ?-MOSVII
- Published
- 2009
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 700mW Ta
- Element Configuration
- Single
- Power Dissipation
- 700mW
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 83m ? @ 1.5A, 10V
- Vgs(th) (Max) @ Id
- 2.6V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 180pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 2.9A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 3.3nC @ 4V
Download datasheets and manufacturer documentation for TOSHIBA SSM3K303T(TE85L,F).
SSM3K303T(TE85L,F) Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 180pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.9A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4V 10V), this device helps reduce its overall power consumption.
SSM3K303T(TE85L,F) Features
a continuous drain current (ID) of 2.9A
a drain-to-source breakdown voltage of 30V voltage
SSM3K303T(TE85L,F) Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3K303T(TE85L,F) applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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