TOSHIBA SSM3K301T(TE85L,F)
Manufacturer No:
SSM3K301T(TE85L,F)
Manufacturer:
TOSHIBA
Package:
TO-236-3, SC-59, SOT-23-3
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 56m ? @ 2A, 4V ±12V 320pF @ 10V 4.8nC @ 4V TO-236-3, SC-59, SOT-23-3
Quantity:
In Stock :7084
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SSM3K301T(TE85L,F) Information
TOSHIBA SSM3K301T(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA SSM3K301T(TE85L,F).
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2007
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Subcategory
- FET General Purpose Powers
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Reach Compliance Code
- unknown
- Number of Channels
- 1
- Power Dissipation-Max
- 700mW Ta
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 18 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 56m ? @ 2A, 4V
- Input Capacitance (Ciss) (Max) @ Vds
- 320pF @ 10V
Download datasheets and manufacturer documentation for TOSHIBA SSM3K301T(TE85L,F).
SSM3K301T(TE85L,F) Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 320pF @ 10V.This device conducts a continuous drain current (ID) of 3.5A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 14 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4V volts (1.8V 4V).
SSM3K301T(TE85L,F) Features
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 14 ns
SSM3K301T(TE85L,F) Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3K301T(TE85L,F) applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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