TOSHIBA SSM3K15AFS,LF
Manufacturer No:
SSM3K15AFS,LF
Manufacturer:
TOSHIBA
Package:
SC-75, SOT-416
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.6 ? @ 10mA, 4V ±20V 13.5pF @ 3V SC-75, SOT-416
Quantity:
In Stock :1841
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SSM3K15AFS,LF Information
TOSHIBA SSM3K15AFS,LF technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA SSM3K15AFS,LF.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-75, SOT-416
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- U-MOSIII
- Published
- 2014
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 100mW Ta
- Power Dissipation
- 100mW
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 3.6 ? @ 10mA, 4V
- Vgs(th) (Max) @ Id
- 1.5V @ 100?A
- Input Capacitance (Ciss) (Max) @ Vds
- 13.5pF @ 3V
- Current - Continuous Drain (Id) @ 25°C
- 100mA Ta
- Drive Voltage (Max Rds On,Min Rds On)
- 2.5V 4V
Download datasheets and manufacturer documentation for TOSHIBA SSM3K15AFS,LF.
SSM3K15AFS,LF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 13.5pF @ 3V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (2.5V 4V), this device helps reduce its overall power consumption.
SSM3K15AFS,LF Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 30V voltage
SSM3K15AFS,LF Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3K15AFS,LF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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