TOSHIBA SSM3J331R,LF
Manufacturer No:
SSM3J331R,LF
Manufacturer:
TOSHIBA
Package:
SOT-23-3 Flat Leads
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 55m ? @ 3A, 4.5V ±8V 630pF @ 10V 10.4nC @ 4.5V 20V SOT-23-3 Flat Leads
Quantity:
In Stock :8288
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SSM3J331R,LF Information
TOSHIBA SSM3J331R,LF technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA SSM3J331R,LF.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-3 Flat Leads
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- U-MOSVI
- Published
- 2004
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 1W Ta
- Element Configuration
- Single
- Power Dissipation
- 1W
- FET Type
- P-Channel
- Rds On (Max) @ Id, Vgs
- 55m ? @ 3A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 630pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 4A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 10.4nC @ 4.5V
Download datasheets and manufacturer documentation for TOSHIBA SSM3J331R,LF.
SSM3J331R,LF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 630pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.
SSM3J331R,LF Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -20V voltage
a 20V drain to source voltage (Vdss)
SSM3J331R,LF Applications
There are a lot of Toshiba Semiconductor and Storage
SSM3J331R,LF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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