ONSEMI SS9015BBU

Manufacturer No:

SS9015BBU

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

PNP 150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

Quantity:

Delivery:

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In Stock :Available

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SS9015BBU information

ONSEMI SS9015BBU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI SS9015BBU.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package
TO-92-3

Operating Temperature
150°C TJ

Packaging
Bulk

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Base Part Number
SS9015

Power - Max
450mW

Transistor Type
PNP

DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA 5V

Current - Collector Cutoff (Max)
50nA ICBO

Vce Saturation (Max) @ Ib, Ic
700mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max)
45V

Current - Collector (Ic) (Max)
100mA

Frequency - Transition
190MHz

Download datasheets and manufacturer documentation for ONSEMI SS9015BBU.

Datasheets:

onsemiconductor-ss9015bbu-datasheets-8525.pdf

SS9015BBU Overview

DC current gain in this device equals 100 @ 1mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 5mA, 100mA.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

SS9015BBU Features

the DC current gain for this device is 100 @ 1mA 5V
the vce saturation(Max) is 700mV @ 5mA, 100mA
the supplier device package of TO-92-3

SS9015BBU Applications

There are a lot of ON Semiconductor
SS9015BBU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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