

Rochester SS9013HBU
Manufacturer No:
SS9013HBU
Manufacturer:
Rochester
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
Quantity:


In Stock :9072
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SS9013HBU Information
Rochester SS9013HBU technical specifications, attributes, parameters and parts with similar specifications to Rochester SS9013HBU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT APPLICABLE
- Pin Count
- 3
- JESD-30 Code
- O-PBCY-T3
- Qualification Status
- COMMERCIAL
- Number of Elements
- 1
Download datasheets and manufacturer documentation for Rochester SS9013HBU.
SS9013HBU Overview
In this device, the DC current gain is 144 @ 50mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 50mA, 500mA.There is a 20V maximal voltage in the device due to collector-emitter breakdown.
SS9013HBU Features
the DC current gain for this device is 144 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA
SS9013HBU Applications
There are a lot of Rochester Electronics, LLC
SS9013HBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number3,000+
Leading Manufacturers4.9 M
In-stock SKU15,000+
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