INFINEON SPP11N60S5XKSA1

Manufacturer No:

SPP11N60S5XKSA1

Manufacturer:

INFINEON

Package:

TO-220

Description:

TO-220

Quantity:

In Stock :5328

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Shipped from：HK Warehouse

Expected Shipping：Mon, May 11 - Tue, May 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SPP11N60S5XKSA1 Information

INFINEON SPP11N60S5XKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON SPP11N60S5XKSA1.

Type
Parameter

Factory Lead Time
12 Weeks

Mount
Through Hole

Package / Case
TO-220

Published
2005

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Number of Elements
1

Power Dissipation
125W

Type
Parameter

Turn On Delay Time
130 ns

Rise Time
35ns

Fall Time (Typ)
20 ns

Turn-Off Delay Time
150 ns

Continuous Drain Current (ID)
11A

Gate to Source Voltage (Vgs)
20V

Drain to Source Breakdown Voltage
600V

Drain to Source Resistance
380mOhm

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for INFINEON SPP11N60S5XKSA1.

Datasheets:

infineontechnologies-spp11n60s5xksa1-datasheets-1470.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

SPP11N60S5XKSA1 Overview

This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 150 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 380mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 130 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.

SPP11N60S5XKSA1 Features

a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 150 ns
single MOSFETs transistor is 380mOhm