INFINEON SPP11N60S5HKSA1
INFINEON SPP11N60S5HKSA1

INFINEON SPP11N60S5HKSA1

Manufacturer No:

SPP11N60S5HKSA1

Manufacturer:

INFINEON

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 380m ? @ 7A, 10V ±20V 1460pF @ 25V 54nC @ 10V 650V TO-220-3

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In Stock :3220

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Shipped from:HK Warehouse
Expected Shipping:Mon, May 11 - Tue, May 12, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

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Step3:Vacuum Packaging

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Step4:Individual Package

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Step5:Anti-collision Filling

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Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SPP11N60S5HKSA1 Information

INFINEON SPP11N60S5HKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON SPP11N60S5HKSA1.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-220-3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tube
  • Series
  • CoolMOS?
  • Published
  • 2005
  • Pbfree Code
  • no
  • Part Status
  • Obsolete
  • Type
  • Parameter
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Additional Feature
  • AVALANCHE RATED
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • SINGLE
  • Peak Reflow Temperature (Cel)
  • NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
  • NOT SPECIFIED
  • Pin Count
  • 3
  • JESD-30 Code
  • R-PSFM-T3

Download datasheets and manufacturer documentation for INFINEON SPP11N60S5HKSA1.

SPP11N60S5HKSA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 340 mJ.A device's maximum input capacitance is 1460pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 150 ns.Its maximum pulsed drain current is 22A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 130 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

SPP11N60S5HKSA1 Features


the avalanche energy rating (Eas) is 340 mJ
a continuous drain current (ID) of 11A
the turn-off delay time is 150 ns
based on its rated peak drain current 22A.
a 650V drain to source voltage (Vdss)


SPP11N60S5HKSA1 Applications


There are a lot of Infineon Technologies
SPP11N60S5HKSA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters