INFINEON SPP11N60CFDHKSA1

Manufacturer No:

SPP11N60CFDHKSA1

Manufacturer:

INFINEON

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 440m ? @ 7A, 10V ±20V 1200pF @ 25V 64nC @ 10V 600V TO-220-3

Quantity:

In Stock :6186

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Shipped from：HK Warehouse

Expected Shipping：Mon, May 11 - Tue, May 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SPP11N60CFDHKSA1 Information

INFINEON SPP11N60CFDHKSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON SPP11N60CFDHKSA1.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
CoolMOS?

Published
2011

Pbfree Code
yes

Type
Parameter

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Additional Feature
AVALANCHE RATED

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Pin Count
3

Qualification Status
Not Qualified

Download datasheets and manufacturer documentation for INFINEON SPP11N60CFDHKSA1.

Datasheets:

infineontechnologies-spp11n60cfdxksa1-datasheets-1801.pdf

ConflictMineralStatement:

infineon-b43821a4225m000-conflictmineralstatement-7662.pdf

SPP11N60CFDHKSA1 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1200pF @ 25V.This device has a continuous drain current (ID) of [11A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 43 ns.A maximum pulsed drain current of 28A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 34 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

SPP11N60CFDHKSA1 Features

a continuous drain current (ID) of 11A
the turn-off delay time is 43 ns
based on its rated peak drain current 28A.
a 600V drain to source voltage (Vdss)