INFINEON SPI80N10L
Manufacturer No:
SPI80N10L
Manufacturer:
INFINEON
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 14m ? @ 58A, 10V ±20V 4540pF @ 25V 240nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :7813
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SPI80N10L Information
INFINEON SPI80N10L technical specifications, attributes, parameters and parts with similar specifications to INFINEON SPI80N10L.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- SIPMOS®
- Published
- 2002
- JESD-609 Code
- e3
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 100V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
Download datasheets and manufacturer documentation for INFINEON SPI80N10L.
Other Related Documents:
ConflictMineralStatement:
SPI80N10L Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4540pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.It is [82 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SPI80N10L Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 82 ns
SPI80N10L Applications
There are a lot of Infineon Technologies
SPI80N10L applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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