INFINEON SPD04P10PLGBTMA1

Manufacturer No:

SPD04P10PLGBTMA1

Manufacturer:

INFINEON

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

P-Channel Tape & Reel (TR) 850m Ω @ 3A, 10V ±20V 372pF @ 25V 16nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :7044

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Shipped from：HK Warehouse

Expected Shipping：Mon, May 11 - Tue, May 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SPD04P10PLGBTMA1 Information

INFINEON SPD04P10PLGBTMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON SPD04P10PLGBTMA1.

Type
Parameter

Factory Lead Time
18 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins
3

Transistor Element Material
SILICON

Current - Continuous Drain (Id) @ 25℃
4.2A Tc

Drive Voltage (Max Rds On, Min Rds On)
4.5V 10V

Number of Elements
1

Power Dissipation (Max)
38W Tc

Type
Parameter

Turn Off Delay Time
18 ns

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
SIPMOS®

Published
2007

JESD-609 Code
e3

Pbfree Code
no

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

Download datasheets and manufacturer documentation for INFINEON SPD04P10PLGBTMA1.

SPD04P10PLGBTMA1 Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 57 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 372pF @ 25V.This device conducts a continuous drain current (ID) of -4.2A, which is the maximum continuous current transistor can conduct.Using VGS=-100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -100V (that is, no charge flow from drain to source).Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With -100V power, it supports a dual voltage supply of up to maximum.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.

SPD04P10PLGBTMA1 Features

the avalanche energy rating (Eas) is 57 mJ
a continuous drain current (ID) of -4.2A
a drain-to-source breakdown voltage of -100V voltage
a threshold voltage of -1.5V
a 100V drain to source voltage (Vdss)