INFINEON SPD04N60C3BTMA1

Manufacturer No:

SPD04N60C3BTMA1

Manufacturer:

INFINEON

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 950m ? @ 2.8A, 10V ±20V 490pF @ 25V 25nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :8110

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Expected Shipping：Mon, May 11 - Tue, May 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SPD04N60C3BTMA1 Information

INFINEON SPD04N60C3BTMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON SPD04N60C3BTMA1.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
CoolMOS?

Published
2005

JESD-609 Code
e3

Pbfree Code
yes

Type
Parameter

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

Terminal Finish
Tin (Sn)

Additional Feature
AVALANCHE RATED

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
not_compliant

Download datasheets and manufacturer documentation for INFINEON SPD04N60C3BTMA1.

Datasheets:

infineontechnologies-spd04n60c3atma1-datasheets-6934.pdf

SPD04N60C3BTMA1 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 130 mJ.The maximum input capacitance of this device is 490pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 4.5A.There is no pulsed drain current maximum for this device based on its rated peak drain current 13.5A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.