

INFINEON SPB10N10
Manufacturer No:
SPB10N10
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 170m ? @ 7.8A, 10V ±20V 426pF @ 25V 19.4nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:


In Stock :9837
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SPB10N10 Information
INFINEON SPB10N10 technical specifications, attributes, parameters and parts with similar specifications to INFINEON SPB10N10.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- SIPMOS®
- Published
- 2002
- JESD-609 Code
- e0
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 100V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
Download datasheets and manufacturer documentation for INFINEON SPB10N10.
Other Related Documents:
ConflictMineralStatement:
SPB10N10 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 426pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10.3A amps.It is [29 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 41.2A.A turn-on delay time of 8.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
SPB10N10 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 10.3A
the turn-off delay time is 29 ns
based on its rated peak drain current 41.2A.
SPB10N10 Applications
There are a lot of Infineon Technologies
SPB10N10 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
SPB10N10 Relevant information
The following parts are popular search parts in Integrated Circuits (ICs).
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