INFINEON SPB10N10
INFINEON SPB10N10

INFINEON SPB10N10

Manufacturer No:

SPB10N10

Manufacturer:

INFINEON

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 170m ? @ 7.8A, 10V ±20V 426pF @ 25V 19.4nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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In Stock :9837

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Shipped from:HK Warehouse
Expected Shipping:Mon, May 11 - Tue, May 12, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SPB10N10 Information

INFINEON SPB10N10 technical specifications, attributes, parameters and parts with similar specifications to INFINEON SPB10N10.

  • Type
  • Parameter
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~175°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • SIPMOS®
  • Published
  • 2002
  • JESD-609 Code
  • e0
  • Type
  • Parameter
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 2
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin/Lead (Sn/Pb)
  • Additional Feature
  • AVALANCHE RATED
  • Subcategory
  • FET General Purpose Power
  • Voltage - Rated DC
  • 100V
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • SINGLE

Download datasheets and manufacturer documentation for INFINEON SPB10N10.

SPB10N10 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 426pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10.3A amps.It is [29 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 41.2A.A turn-on delay time of 8.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

SPB10N10 Features


the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 10.3A
the turn-off delay time is 29 ns
based on its rated peak drain current 41.2A.


SPB10N10 Applications


There are a lot of Infineon Technologies
SPB10N10 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies