Texas Instruments SN74CB3Q3345PWRG4

Manufacturer No:

SN74CB3Q3345PWRG4

Manufacturer:

Texas Instruments

Package:

Description:

3.3-V, 1:1 (SPST), 8-channel FET bus switch with 2 control inputs

Quantity:

In Stock :4027

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SN74CB3Q3345PWRG4 Information

Texas Instruments SN74CB3Q3345PWRG4 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments SN74CB3Q3345PWRG4.

Type
Parameter

Configuration
1:1 SPST

Number of channels
8

Power supply voltage - single (V)
2.5, 3.3

Protocols
Analog

Ron (typ) (Ω)
4

CON (typ) (pF)
9

Supply current (typ) (µA)
1000

Bandwidth (MHz)
500

Operating temperature range (°C)
-40 to 85

Features
Powered-off protection, Supports input voltage beyond supply

Type
Parameter

Input/output continuous current (max) (mA)
64

Rating
Catalog

Drain supply voltage (max) (V)
3.6

Supply voltage (max) (V)
3.6

Package
SSOP (DBQ)

Pins
20

Size
51.9 mm² 8.65 x 6

Package
TSSOP (PW)

Pins
20

Size
41.6 mm² 6.5 x 6.4

Download datasheets and manufacturer documentation for Texas Instruments SN74CB3Q3345PWRG4.

The SN74CB3Q3345 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3345 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3384A is organized as an 8-bit bus switch with two output-enable (OE, OE) inputs. When OE is high or OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup resistor and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

High-Bandwidth Data Path (up to 500 MHz)⁽¹⁾
5-V-Tolerant I/Os With Device Powered Up or Powered Down
Low and Flat ON-State Resistance (r_on) Characteristics Over Operating Range
(r_on= 4 Typ)
Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V V_CC
- 0- to 3.3-V Switching With 2.5-V V_CC
Bidirectional Data Flow With Near-Zero Propagation Delay
Low Input/Output Capacitance Minimizes Loading and Signal Distortion
(C_io(OFF)= 4 pF Typ)
Fast Switching Frequency (f_OE = 20 MHz Max)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (I_CC= 0.7 mA Typ)
V_CC Operating Range From 2.3 V to 3.6 V
Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
I_off Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model
  (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Both Digital and Analog Applications: Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.)