VISHAY SIHS90N65E-GE3

Manufacturer No:

SIHS90N65E-GE3

Manufacturer:

VISHAY

Package:

TO-274AA

Description:

MOSFET (Metal Oxide) N-Channel 29mOhm @ 45A, 10V ±30V 11826 pF @ 100 V 591 nC @ 10 V 650 V TO-274AA

Quantity:

In Stock :2254

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SIHS90N65E-GE3 Information

VISHAY SIHS90N65E-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SIHS90N65E-GE3.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-274AA

Supplier Device Package
SUPER-247? (TO-274AA)

Mfr
Vishay Siliconix

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
625W (Tc)

Series
E

Operating Temperature
-55°C ~ 150°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
29mOhm @ 45A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
11826 pF @ 100 V

Current - Continuous Drain (Id) @ 25°C
87A (Tc)

Gate Charge (Qg) (Max) @ Vgs
591 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±30V

Download datasheets and manufacturer documentation for VISHAY SIHS90N65E-GE3.

SIHS90N65E-GE3 Overview

A device's maximum input capacitance is 11826 pF @ 100 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650 V drain to source voltage (Vdss).