VISHAY SIHG17N80E-GE3
Manufacturer No:
SIHG17N80E-GE3
Manufacturer:
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 290m ? @ 8.5A, 10V ±30V 2408pF @ 100V 122nC @ 10V TO-247-3
Quantity:
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SIHG17N80E-GE3 Information
VISHAY SIHG17N80E-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SIHG17N80E-GE3.
- Type
- Parameter
- Factory Lead Time
- 14 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- E
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Number of Channels
- 1
- Type
- Parameter
- Power Dissipation-Max
- 208W Tc
- Power Dissipation
- 208W
- Turn On Delay Time
- 22 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 290m ? @ 8.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 2408pF @ 100V
- Current - Continuous Drain (Id) @ 25°C
- 15A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 122nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
Download datasheets and manufacturer documentation for VISHAY SIHG17N80E-GE3.
PCN Assembly/Origin:
PCN Packaging:
RohsStatement:
SIHG17N80E-GE3 Overview
A device's maximum input capacitance is 2408pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 71 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
SIHG17N80E-GE3 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 71 ns
SIHG17N80E-GE3 Applications
There are a lot of Vishay Siliconix
SIHG17N80E-GE3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
SIHG17N80E-GE3 Relevant information
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