VISHAY SIHFB11N50A-E3

Manufacturer No:

SIHFB11N50A-E3

Manufacturer:

VISHAY

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 520m ? @ 6.6A, 10V ±30V 1423pF @ 25V 52nC @ 10V 500V TO-220-3

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SIHFB11N50A-E3 information

VISHAY SIHFB11N50A-E3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SIHFB11N50A-E3.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Published
2009

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Terminal Finish
Matte Tin (Sn)

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Pin Count
3

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
170W Tc

Operating Mode
ENHANCEMENT MODE

Turn On Delay Time
14 ns

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
520m ? @ 6.6A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1423pF @ 25V

Current - Continuous Drain (Id) @ 25°C
11A Tc

Gate Charge (Qg) (Max) @ Vgs
52nC @ 10V

Rise Time
35ns

Drain to Source Voltage (Vdss)
500V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±30V

Fall Time (Typ)
28 ns

Turn-Off Delay Time
32 ns

Continuous Drain Current (ID)
11A

JEDEC-95 Code
TO-220AB

Gate to Source Voltage (Vgs)
30V

Drain-source On Resistance-Max
0.52Ohm

Pulsed Drain Current-Max (IDM)
44A

DS Breakdown Voltage-Min
500V

Avalanche Energy Rating (Eas)
275 mJ

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for VISHAY SIHFB11N50A-E3.

Datasheets:

vishaysiliconix-irfb11n50apbf-datasheets-1825.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

SIHFB11N50A-E3 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 275 mJ.A device's maximal input capacitance is 1423pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 32 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 44A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

SIHFB11N50A-E3 Features

the avalanche energy rating (Eas) is 275 mJ
a continuous drain current (ID) of 11A
the turn-off delay time is 32 ns
based on its rated peak drain current 44A.
a 500V drain to source voltage (Vdss)

SIHFB11N50A-E3 Applications

There are a lot of Vishay Siliconix
SIHFB11N50A-E3 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

User Guide

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SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.