SI7848DP-T1-E3-VISHAY-Price, Stock & Datasheet

SI7848DP-T1-E3 Overview

Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10.4A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 12mOhm.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI7848DP-T1-E3 Features

a continuous drain current (ID) of 10.4A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 12mOhm
a 40V drain to source voltage (Vdss)