VISHAY SI7615DN-T1-GE3

Manufacturer No:

SI7615DN-T1-GE3

Manufacturer:

VISHAY

Package:

PowerPAK® 1212-8

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 3.9m ? @ 20A, 10V ±12V 6000pF @ 10V 183nC @ 10V 20V PowerPAK® 1212-8

Quantity:

In Stock :Available

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Shipped from：HK Warehouse

Expected Shipping：Sun, Apr 26 - Mon, Apr 27, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SI7615DN-T1-GE3 Information

VISHAY SI7615DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SI7615DN-T1-GE3.

Type
Parameter

Factory Lead Time
14 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
PowerPAK® 1212-8

Number of Pins
8

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
TrenchFET®

Published
2011

Type
Parameter

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
5

ECCN Code
EAR99

Resistance
3.9MOhm

Terminal Finish
Matte Tin (Sn)

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Download datasheets and manufacturer documentation for VISHAY SI7615DN-T1-GE3.

Datasheets:

vishaysiliconix-si7615dnt1ge3-datasheets-6777.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

SI7615DN-T1-GE3 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 20 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6000pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -20V.There is no drain current on this device since the maximum continuous current it can conduct is 22.6A.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 35 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).

SI7615DN-T1-GE3 Features

the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of -35A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 80 ns
a 20V drain to source voltage (Vdss)