VISHAY SI4431BDY-T1-GE3

Manufacturer No:

SI4431BDY-T1-GE3

Manufacturer:

VISHAY

Package:

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Description:

Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Quantity:

In Stock :8779

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 15 - Sat, May 16, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SI4431BDY-T1-GE3 Information

VISHAY SI4431BDY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SI4431BDY-T1-GE3.

Type
Parameter

RoHS Status
RoHS Compliant

Part Life Cycle Code
Transferred

Ihs Manufacturer
VISHAY SILICONIX

Part Package Code
SOT

Package Description
HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Pin Count
8

Reach Compliance Code
compliant

ECCN Code
EAR99

Samacsys Manufacturer
Vishay

Configuration
SINGLE WITH BUILT-IN DIODE

Type
Parameter

DS Breakdown Voltage-Min
30 V

Drain Current-Max (ID)
5.7 A

Drain-source On Resistance-Max
0.03 Ω

FET Technology
METAL-OXIDE SEMICONDUCTOR

JESD-30 Code
R-PDSO-G8

JESD-609 Code
e3

Moisture Sensitivity Level
1

Number of Elements
1

Number of Terminals
8

Operating Mode
ENHANCEMENT MODE

Download datasheets and manufacturer documentation for VISHAY SI4431BDY-T1-GE3.

Datasheets:

SILXS25895-1.pdf

SI4431BDY-T1-GE3 Overview

Its continuous drain current is -5.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -3V.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).