VISHAY SI2306BDS-T1-GE3
Manufacturer No:
SI2306BDS-T1-GE3
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 47m ? @ 3.5A, 10V ±20V 305pF @ 15V 4.5nC @ 5V 30V TO-236-3, SC-59, SOT-23-3
Quantity:
Delivery:
Payment:
PRICING (in USD)
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $ 0.347650 | $ 0.347650 |
| 10 | $ 0.231700 | $ 2.317000 |
| 100 | $ 0.158050 | $ 15.805000 |
| 500 | $ 0.124500 | $ 62.250000 |
In Stock :Available
Want a lower wholesale price? Please send RFQ, we will respond immediately.
SI2306BDS-T1-GE3 information
VISHAY SI2306BDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SI2306BDS-T1-GE3.
| Type | Parameter |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 1.437803g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2016 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 47MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Type | Parameter |
|---|---|
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 750mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 750mW |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 47m ? @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250?A |
| Input Capacitance (Ciss) (Max) @ Vds | 305pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 3.16A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 5V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 4A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
SI2306BDS-T1-GE3 Relevant information
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12.28 M
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