STMicroelectronics SCTWA90N65G2V-4

Manufacturer No:

SCTWA90N65G2V-4

Manufacturer:

STMicroelectronics

Package:

Description:

TRANS SJT N-CH 650V 119A HIP247.N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads

Quantity:

In Stock :3379

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

Payment

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All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

Quality Assurance

Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.

RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SCTWA90N65G2V-4 Information

STMicroelectronics SCTWA90N65G2V-4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics SCTWA90N65G2V-4.

Type
Parameter

Packaging
Tube

Part Status
Active

Manufacturer Lead Time
32 Weeks

Current - Continuous Drain (Id) @ 25°C
119A (Tc)

Drain to Source Voltage (Vdss)
650 V

FET Type
N-Channel

Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds
3380 pF @ 400 V

Mounting Type
Through Hole

Operating Temperature
-55°C ~ 200°C (TJ)

Type
Parameter

Package / Case
TO-247-3

Power Dissipation (Max)
565W (Tc)

Rds On (Max) @ Id, Vgs
24mOhm @ 50A, 18V

Supplier Device Package
HiP247™ Long Leads

Technology
SiCFET (Silicon Carbide)

Vgs (Max)
+22V, -10V

Vgs(th) (Max) @ Id
5V @ 1mA

ExportControlClassNumber
EAR99

HtsusCode
8541.29.0095

MoistureSensitivityLevel
3 (168 Hours)

Download datasheets and manufacturer documentation for STMicroelectronics SCTWA90N65G2V-4.

Data sheet:

3b739a13477394dfaeb65db3bc5fa9c7.pdf

Material Declaration:

md_a0tm-wspc-to247-4_tstmsqfjbyf.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features