STMicroelectronics SCTW40N120G2V
Manufacturer No:
SCTW40N120G2V
Manufacturer:
STMicroelectronics
Package:
Description:
SILICON CARBIDE POWER MOSFET 120.N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
Quantity:
In Stock :1980
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SCTW40N120G2V Information
STMicroelectronics SCTW40N120G2V technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics SCTW40N120G2V.
- Type
- Parameter
- Packaging
- Tube
- Part Status
- Active
- Manufacturer Lead Time
- 32 Weeks
- Current - Continuous Drain (Id) @ 25°C
- 36A (Tc)
- Drain to Source Voltage (Vdss)
- 1200 V
- Drive Voltage (Max Rds On, Min Rds On)
- 18V
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 61 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds
- 1233 pF @ 800 V
- Mounting Type
- Through Hole
- Type
- Parameter
- Operating Temperature
- -55°C ~ 200°C (TJ)
- Package / Case
- TO-247-3
- Power Dissipation (Max)
- 278W (Tc)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 20A, 18V
- Supplier Device Package
- HiP247™
- Technology
- SiCFET (Silicon Carbide)
- Vgs (Max)
- +22V, -10V
- Vgs(th) (Max) @ Id
- 4.9V @ 1mA
- ExportControlClassNumber
- EAR99
- HtsusCode
- 8541.29.0095
Download datasheets and manufacturer documentation for STMicroelectronics SCTW40N120G2V.
Data sheet:
Material Declaration:
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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