ST SCTW35N65G2VAG

Manufacturer No:

SCTW35N65G2VAG

Manufacturer:

ST

Package:

TO-247-3

Description:

SiCFET (Silicon Carbide) N-Channel 67m ? @ 20A, 20V +22V, -10V 1370pF @ 400V 73nC @ 20V 650V TO-247-3

Quantity:

In Stock :4821

Looking for price or availability? Send us an RFQ and our sales team will respond quickly.

Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

Payment

We support multiple secure payment methods including PayPal, Visa, MasterCard, and American Express. All transactions are protected with advanced encryption to ensure secure and reliable payments.

Authenticity Guarantee

All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.

Quality Assurance

Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.

User Guide

Available from AS9120 Certified Supplier, AIChipLink delivers high-reliability electronic components supported by certified quality management, rigorous inspection processes, counterfeit mitigation controls, and full traceability systems. Our operations comply with AS9120, ISO 9001:2015, and IECQ ESD standards to support aerospace, industrial, defense, and mission-critical applications.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.

RFQ (REQUEST FOR QUOTATIONS)

Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SCTW35N65G2VAG Information

ST SCTW35N65G2VAG technical specifications, attributes, parameters and parts with similar specifications to ST SCTW35N65G2VAG.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-3

Operating Temperature
-55°C~200°C TJ

Series
Automotive, AEC-Q101

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
SiCFET (Silicon Carbide)

Reach Compliance Code
compliant

Power Dissipation-Max
240W Tc

FET Type
N-Channel

Type
Parameter

Rds On (Max) @ Id, Vgs
67m ? @ 20A, 20V

Vgs(th) (Max) @ Id
5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
1370pF @ 400V

Current - Continuous Drain (Id) @ 25°C
45A Tc

Gate Charge (Qg) (Max) @ Vgs
73nC @ 20V

Drain to Source Voltage (Vdss)
650V

Drive Voltage (Max Rds On,Min Rds On)
18V 20V

Vgs (Max)
+22V, -10V

Download datasheets and manufacturer documentation for ST SCTW35N65G2VAG.

Datasheets:

stmicroelectronics-sctw35n65g2vag-datasheets-0660.pdf

SCTW35N65G2VAG Description

ST's superior and revolutionary 2nd generation SiC MOSFET technology was used to build the SCTW35N65G2VAG silicon carbide Power MOSFET, which has a surprisingly low on-resistance per unit area and very strong switching performance.