ROHM SCT4045DRC15

Manufacturer No:

SCT4045DRC15

Manufacturer:

ROHM

Package:

TO-247-4

Description:

SiCFET (Silicon Carbide) N-Channel 59mOhm @ 17A, 18V +21V, -4V 1460 pF @ 500 V 63 nC @ 18 V 750 V TO-247-4

Quantity:

In Stock :5833

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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PURCHASE

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SCT4045DRC15 Information

ROHM SCT4045DRC15 technical specifications, attributes, parameters and parts with similar specifications to ROHM SCT4045DRC15.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-4

Supplier Device Package
TO-247-4L

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
18V

Power Dissipation (Max)
115W

Base Product Number
SCT4045

Operating Temperature
175°C (TJ)

Type
Parameter

Technology
SiCFET (Silicon Carbide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
59mOhm @ 17A, 18V

Vgs(th) (Max) @ Id
4.8V @ 8.89mA

Input Capacitance (Ciss) (Max) @ Vds
1460 pF @ 500 V

Current - Continuous Drain (Id) @ 25°C
34A (Tc)

Gate Charge (Qg) (Max) @ Vgs
63 nC @ 18 V

Drain to Source Voltage (Vdss)
750 V

Vgs (Max)
+21V, -4V

Download datasheets and manufacturer documentation for ROHM SCT4045DRC15.

SCT4045DRC15 Overview

A device's maximal input capacitance is 1460 pF @ 500 V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 750 V drain to source voltage (Vdss).