ROHM SCT4026DEC11

Manufacturer No:

SCT4026DEC11

Manufacturer:

ROHM

Package:

TO-247-3

Description:

SiCFET (Silicon Carbide) N-Channel 34mOhm @ 29A, 18V +21V, -4V 2320 pF @ 500 V 94 nC @ 18 V 750 V TO-247-3

Quantity:

In Stock :2002

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SCT4026DEC11 Information

ROHM SCT4026DEC11 technical specifications, attributes, parameters and parts with similar specifications to ROHM SCT4026DEC11.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-3

Supplier Device Package
TO-247N

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
18V

Power Dissipation (Max)
176W

Base Product Number
SCT4026

Operating Temperature
175°C (TJ)

Type
Parameter

Technology
SiCFET (Silicon Carbide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
34mOhm @ 29A, 18V

Vgs(th) (Max) @ Id
4.8V @ 15.4mA

Input Capacitance (Ciss) (Max) @ Vds
2320 pF @ 500 V

Current - Continuous Drain (Id) @ 25°C
56A (Tc)

Gate Charge (Qg) (Max) @ Vgs
94 nC @ 18 V

Drain to Source Voltage (Vdss)
750 V

Vgs (Max)
+21V, -4V

Download datasheets and manufacturer documentation for ROHM SCT4026DEC11.

SCT4026DEC11 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2320 pF @ 500 V.In order to operate this transistor, a voltage of 750 V is needed from the drain to the source (Vdss).