ROHM SCT3040KRC15

Manufacturer No:

SCT3040KRC15

Manufacturer:

ROHM

Package:

TO-247-4

Description:

SiC (Silicon Carbide Junction Transistor) N-Channel 52mOhm @ 20A, 18V +22V, -4V 1337 pF @ 800 V 107 nC @ 18 V 1200 V TO-247-4

Quantity:

In Stock :7107

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SCT3040KRC15 Information

ROHM SCT3040KRC15 technical specifications, attributes, parameters and parts with similar specifications to ROHM SCT3040KRC15.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-4

Supplier Device Package
TO-247-4L

Mounting Style
Through Hole

Package
Tube

Base Product Number
SCT3040

Drive Voltage (Max Rds On, Min Rds On)
18V

Mfr
Rohm Semiconductor

Power Dissipation (Max)
262W

Product Status
Active

Type
Parameter

Vds - Drain-Source Breakdown Voltage
1.2 kV

Vgs th - Gate-Source Threshold Voltage
5.6 V

Pd - Power Dissipation
262 W

Transistor Polarity
N-Channel

Maximum Operating Temperature
+ 175 C

Vgs - Gate-Source Voltage
- 4 V, + 22 V

Channel Mode
Enhancement

Qg - Gate Charge
107 nC

Rds On - Drain-Source Resistance
40 mOhms

Id - Continuous Drain Current
55 A

Download datasheets and manufacturer documentation for ROHM SCT3040KRC15.

SCT3040KRC15 Overview

The maximum input capacitance of this device is 1337 pF @ 800 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 1200 V in order to operate.