ROHM SCT2H12NYTB
Manufacturer No:
SCT2H12NYTB
Manufacturer:
ROHM
Package:
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Description:
SiCFET (Silicon Carbide) N-Channel Tape & Reel (TR) 1.5 ? @ 1.1A, 18V +22V, -6V 184pF @ 800V 14nC @ 18V 1700V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Quantity:
In Stock :8008
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SCT2H12NYTB Information
ROHM SCT2H12NYTB technical specifications, attributes, parameters and parts with similar specifications to ROHM SCT2H12NYTB.
- Type
- Parameter
- Factory Lead Time
- 19 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Surface Mount
- YES
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2017
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- ECCN Code
- EAR99
- Technology
- SiCFET (Silicon Carbide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for ROHM SCT2H12NYTB.
SCT2H12NYTB Overview
A device's maximal input capacitance is 184pF @ 800V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 10A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1700V.This transistor requires a 1700V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (18V).
SCT2H12NYTB Features
based on its rated peak drain current 10A.
a 1700V drain to source voltage (Vdss)
SCT2H12NYTB Applications
There are a lot of ROHM Semiconductor
SCT2H12NYTB applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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