ROHM SCT2450KEC
Manufacturer No:
SCT2450KEC
Manufacturer:
ROHM
Package:
TO-247-3
Description:
SiCFET (Silicon Carbide) N-Channel Tube 585m ? @ 3A, 18V +22V, -6V 463pF @ 800V 27nC @ 18V 1200V TO-247-3
Quantity:
In Stock :7138
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SCT2450KEC Information
ROHM SCT2450KEC technical specifications, attributes, parameters and parts with similar specifications to ROHM SCT2450KEC.
- Type
- Parameter
- Factory Lead Time
- 19 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Operating Temperature
- 175°C TJ
- Packaging
- Tube
- Published
- 2012
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Resistance
- 585mOhm
- Technology
- SiCFET (Silicon Carbide)
- Number of Elements
- 1
- Power Dissipation-Max
- 85W Tc
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 19 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
Download datasheets and manufacturer documentation for ROHM SCT2450KEC.
SCT2450KEC Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 463pF @ 800V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.With a drain-source breakdown voltage of 1.2kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1.2kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 38 ns.Peak drain current for this device is 25A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (18V) reduces this device's overall power consumption.
SCT2450KEC Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 25A.
a threshold voltage of 4V
a 1200V drain to source voltage (Vdss)
SCT2450KEC Applications
There are a lot of ROHM Semiconductor
SCT2450KEC applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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