ROHM SCT2280KEC
Manufacturer No:
SCT2280KEC
Manufacturer:
ROHM
Package:
TO-247-3
Description:
SiCFET (Silicon Carbide) N-Channel Tube 364m ? @ 4A, 18V +22V, -6V 667pF @ 800V 36nC @ 18V 1200V TO-247-3
Quantity:
In Stock :7136
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
SCT2280KEC Information
ROHM SCT2280KEC technical specifications, attributes, parameters and parts with similar specifications to ROHM SCT2280KEC.
- Type
- Parameter
- Factory Lead Time
- 19 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Operating Temperature
- 175°C TJ
- Packaging
- Tube
- Published
- 2012
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Resistance
- 280mOhm
- Technology
- SiCFET (Silicon Carbide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Number of Elements
- 1
- Power Dissipation-Max
- 108W Tc
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 19 ns
Download datasheets and manufacturer documentation for ROHM SCT2280KEC.
SCT2280KEC Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 667pF @ 800V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1.2kV. And this device has 1.2kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 47 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 22V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 1200V drain to source voltage (Vdss).By using drive voltage (18V), this device helps reduce its overall power consumption.
SCT2280KEC Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 47 ns
a threshold voltage of 4V
a 1200V drain to source voltage (Vdss)
SCT2280KEC Applications
There are a lot of ROHM Semiconductor
SCT2280KEC applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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